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2SB1132 - Medium Power Transistor

Key Features

  • Low VCE(sat) Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Single pulse, PW =100ms Collector Power Dissipation Jumction temperature Storage temperature Range.
  • mounted on a 40x40x0.7mm ceramic board. PC.
  • Tj Tstg Symbol VCBO VCEO VEBO IC Rating -40 -32 -5 -1 -2 0.5 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter.

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SMD Type Medium Power Transistor 2SB1132 Transistors Features Low VCE(sat) Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Single pulse, PW =100ms Collector Power Dissipation Jumction temperature Storage temperature Range * mounted on a 40x40x0.7mm ceramic board. PC * Tj Tstg Symbol VCBO VCEO VEBO IC Rating -40 -32 -5 -1 -2 0.