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2SA2058 - PNP Transistors

Key Features

  • s.
  • High DC current gain: hFE = 200 to 500 (IC =.
  • 0.2 A).
  • Low collector-emitter saturation voltage: VCE (sat) =.
  • 0.19 V (max).
  • High-speed switching: tf = 25 ns (typ. ) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO.

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SMD Type PNP Transistors 2SA2058 Transistors ■ Features ● High DC current gain: hFE = 200 to 500 (IC = −0.2 A) ● Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) ● High-speed switching: tf = 25 ns (typ.) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous Collector Current - Pulse IC -1.5 A ICP -2.5 Base Current IB -150 mA Collector Power Dissipation PC t=10s (Note.