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SMD Type
PNP Transistors 2SA1766
Transistors
■ Features
● Adoption of FBET, MBIT processes. ● High DC current gain (hFE=500 to 1200). ● Large current capacity. ● Low collector-to-emitter saturation voltage. ● High VEBO.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector - Base Voltage
VCBO
Collector - Emitter Voltage
VCEO
Emitter - Base Voltage
VEBO
Collector Current - Continuous
IC
Collector Current - Pulse
ICP
Base Current
IB
Collector Power Dissipation (Note.1)
PC
Junction Temperature
TJ
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm 2 X 0.8mm)
Rating -30 -25 -15 -300 -500 -60 1.