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2SA1669 - PNP Epitaxial Planar Silicon Transistors

Features

  • High cutoff frequency : fT=3.0GHz typ. High power gain : MAG=11dB typ (f=0.9GHz) Small noise figure: NF=2.0dB typ (f=0.9GHz) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -20 -15 -3 -50 250 150 -55 to +150 Unit V V V mA mW 0.

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SMD Type TransistIoCrs PNP Epitaxial Planar Silicon Transistors 2SA1669 Features High cutoff frequency : fT=3.0GHz typ. High power gain : MAG=11dB typ (f=0.9GHz) Small noise figure: NF=2.0dB typ (f=0.9GHz) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -20 -15 -3 -50 250 150 -55 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.
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