Download 1N4448W Datasheet PDF
Kexin Semiconductor
1N4448W
Features - Fast Switching Speed - For General Purpose Switching Applications. - High Conductance SOD-123 2.7 +0.1 -0.1 3.7 +0.1 -0.1 +0.1 0.55 -0.1 +0.1 1.6 -0.1 Diodes Unit: mm 1.1 +0.05 -0.05 0.1max +0.05 0.1 -0.02 - Absolute Maximum Ratings Ta = 25℃ Parameter Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Forward Continuous Current Peak Forward Surge Current @ t=1us @t =1s Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VRM VRRM VRWM VR VR(RMS) IO IFM IFSM Pd RθJA TJ Tstg Rating 100 53 250 500 4 1.5 500 250 150 -55 to 150 Unit V m A A m W ℃/W ℃ - Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Junction capacitance Reverse recovery time Symbol Test Conditions VR IR= 100 u A VF1 IF= 5m A VF2 IF= 10 m A VF3 IF= 100 m...