1N60PW - Silicon Schottky Barrier Diode

Product Overview

Datasheet Details

Part number	1N60PW
Manufacturer	KUU
File Size	309.14 KB
Description	Silicon Schottky Barrier Diode
Datasheet	1N60PW Datasheet
Additional preview pages of the 1N60PW datasheet.

Product details

Description

1 Cathode 2 Anode 2 1 Top View Marking Code: L60 Simplified outline SOD-123 and symbol 1N60PW 45 20 50 150 500 4 50 38 55 125 -55 ~ +150 Units V V mA mA mA mA uA pF ％ °C °C Average Forward Current (mA) Instaneous Reverse Current ( μA) Fig.1 Forward Characteristics 30 25 20 15 10 5 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Voltage (V) Fig.2 Typical Reverse Characteristics 200 100 0 0 10 20 30 40 50 Reverse Voltage（V） 1/2 PACKAGE OUTLINE Plastic surface mounted package; 2 leads E

Features

Metal silicon junction, majority carrier conduction.
Ideal for used in detection or for switching on the radio, TV, etc.

📁 Similar Datasheet

1N60PW - Silicon Schottky Barrier Diode (Youfeng)
1N60PW - Gold Wire Bonding Diode (SEMTECH)
1N60PW - Schottky Barrier Diode (Ping Jing)
1N60PW - SCHOTTKY BARRIER DIODE (Sunmate)
1N60P - Small Signal Diodes (CITC)
1N60P - 600V 1.2A N-CHANNEL POWER MOSFET (UTC)
1N60P - SMALL SIGNAL SCHOTTKY DIODE (KD)
1N60P - Germanium Glass Diode (TAITRON)

Other Datasheets by KUU

Published: Sep 14, 2025 |