KIA7N60
Description
The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
2. Features
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- - 6.9A, 600V, RDS(on)= 1.1Ω @ VGS= 10 V Low gate charge ( typical 32n C) Low crss ( typical 15p F) Fast switching 100% avalanche tested Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
Function Gate Drain Source
1 of 7
SEMICONDUCTORS
600V N-CHANNEL MOSFET
7N60
4. Absolute maximum ratings
Parameter Drain-source voltage Tc=25 ºC Drain current Tc=100 ºC Drain current pulsed (note 1) Gate-source voltage Single pulsed avalanche energy (note 2) Avalanche current (note 1) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Tc=25 ºC Power dissipation...
