7N60H
Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
2. Features
- RDS(on)=1.0Ω @ VGS=10V
- Ultra low gate charge (typical 27n C)
- Low reverse transfer capacitance
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
3. Pin configuration
Pin 1 2 3 4
1 of 6
Function Gate Drain
Source Drain
Rev 1.1 JAN 2014
SEMICONDUCTORS
7.0A,600V N-CHANNEL MOSFET
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage Gate-source voltage
VDSS VGSS
Drain current continuous
TC=25ºC TC=100ºC
Drain current pulsed (note1)
Avalanche energy
Repetitive...
