Datasheet4U.com

MJD112 - EPITAXIAL PLANAR NPN TRANSISTOR

Product Overview

KEC

📥 Download Datasheet

MJD112 EPITAXIAL PLANAR NPN TRANSISTOR by KEC - Datasheet Preview — Datasheet preview – MJD112

Datasheet Details

Part number	MJD112
Manufacturer	KEC
File Size	391.48 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	MJD112 Datasheet
Additional preview pages of the MJD112 datasheet.

Product details

Features

High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.

📁 Similar Datasheet

MJD112 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
MJD112 - Silicon NPN epitaxial planer Transistors (MCC)
MJD112 - Silicon NPN Power Transistor (Inchange Semiconductor)
MJD112 - NPN Silicon Darlington Transistor (Fairchild Semiconductor)
MJD112 - COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS (CDIL)
MJD112 - NPN Transistor (JCET)
MJD112 - Epitaxial Planar NPN Transistor (GME)
MJD112 - Complementary Darlington Power Transistor (ON Semiconductor)

Other Datasheets by KEC

MJD112L - EPITAXIAL PLANAR NPN TRANSISTOR
MJD117 - EPITAXIAL PLANAR PNP TRANSISTOR
MJD117L - EPITAXIAL PLANAR PNP TRANSISTOR

Published: Sep 3, 2017 |