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KTA1666 - EPITAXIAL PLANAR PNP TRANSISTOR

Key Features

  • ᴌLow Saturation Voltage : VCE(sat)=-0.5V(Max. ) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ. ) ᴌPC=1ᴕ2W (Mounted on Ceramic Substrate) ᴌSmall Flat Package. ᴌComplementary to KTC4379.

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Datasheet Details

Part number KTA1666
Manufacturer KEC
File Size 84.98 KB
Description EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet KTA1666 Datasheet

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Full PDF Text Transcription for KTA1666 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTA1666. For precise diagrams, tables, and layout, please refer to the original PDF.

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SEMICONDUCTOR TECHNICAL DATA KTA1666 EPITAXIAL PLANAR PNP TRANSISTOR 30Ω J BW E POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES ᴌLow Saturation Voltage : VCE(sat)=-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.) ᴌPC=1ᴕ2W (Mounted on Ceramic Substrate) ᴌSmall Flat Package. ᴌComplementary to KTC4379. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC * Tj -50 -50 -5 -2 -0.4 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTA1666 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V A A mW W ᴱ ᴱ AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.