High output drive : 24mA(min. ) @VCC=3V. Super high speed operation : tpZL 2.2ns(typ. ) @VCC=5V, 50pF. Operation voltage range : VCC(opr)=1.65~5.5V. Latch-up performance : 500mA or more ESD performance : 200V or more (EIAJ) 2000V or more (MIL) Power down protection is provided on all inputs and outputs.
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SEMICONDUCTOR TECHNICAL DATA DUAL 2 INPUT NAND GATE (OPEN DRAIN) FEATURES High output drive : 24mA(min.) @VCC=3V. Super high speed operation : tpZL 2.2ns(typ.) @VCC=5V, 5...
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in.) @VCC=3V. Super high speed operation : tpZL 2.2ns(typ.) @VCC=5V, 50pF. Operation voltage range : VCC(opr)=1.65~5.5V. Latch-up performance : 500mA or more ESD performance : 200V or more (EIAJ) 2000V or more (MIL) Power down protection is provided on all inputs and outputs. MARKING Type Name Z38 Lot No. A F DD D E KIC7WZ38FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT B C DIM MILLIMETERS 1 8 A 2.0 +_ 0.1 B 3.1+_ 0.1 C 2.3+_ 0.1 D 0.5 4 5 E 0.2+0.05/-0.04 F 0.7+_ 0.1 G 0.12+_ 0.04 H 0 ~ 0.
KIC7WZ38FK Datasheet
