BAV70T
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9p F (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
VR 80
Continuous Forward Current
IF 150
Surge Current (10ms)
IFSM
Power Dissipation
PD 200
- Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note :
- Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V V m A A m W
SILICON EPITAXIAL PLANAR DIODE
2 13
DIM MILLIMETERS A 1.60+_ 0.10
D B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
1. ANODE 1 2. ANODE 2 3. CATHODE
3...
