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SEMICONDUCTOR
TECHNICAL DATA
For high speed Switching.
FEATURES Low Forward Voltage. Low Leakage Current.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Reverse Voltage Average Forward Current Non-repetitive Peak Forward Surge Current (t<1.0s) Repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperature
SYMBOL VR IO
RATING 30 0.2
UNIT V A
IFSM
0.6 A
IFRM PD Tj Tstg
0.3 0.2 125 -55 150
A W
BAT54S
SCHOTTKY BARRIER TYPE DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. CATHODE 1 2. ANODE 2 3. ANODE 1/CATHODE 2
3 D2 D1
21
SOT-23
Marking
L44Type Name
Lot No.
BAT54S Datasheet
