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BAS23W - SILICON EPITAXIAL PLANAR DIODE

Features

  • High Reliability. Small surface mounting type (USM).

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Datasheet Details

Part number BAS23W
Manufacturer KEC
File Size 424.74 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet BAS23W Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES High Reliability. Small surface mounting type (USM). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage VRM VR 300 250 Continuous Forward Current IF 200 Surge Current (10mS) IFSM 2 Power Dissipation PD 200 * Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW BAS23W SILICON EPITAXIAL PLANAR DIODE A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. CATHODE 1 2. ANODE 2 3.
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