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7D5N60F1 - KHB7D5N60F1

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V K M L J D N N P H Qg(typ. )= 32.5nC DIM.

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Datasheet Details

Part number 7D5N60F1
Manufacturer KEC
File Size 885.10 KB
Description KHB7D5N60F1
Datasheet download datasheet 7D5N60F1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description KHB7D5N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D5N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A O C F E G B Q I FEATURES VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V K M L J D N N P H Qg(typ.)= 32.5nC DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.
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