• Part: S13003ADL
  • Description: Bipolar Junction Transistor
  • Category: Transistor
  • Manufacturer: Jingdao
  • Size: 119.54 KB
Download S13003ADL Datasheet PDF
Jingdao
S13003ADL
FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-126D 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO h FE- - sat - sat tr tf ts f T VCBO VCEO VEBO Ptot Tj Tstg 400 200 9 3.5 1.25 25 150...