C1815
FEATURES
Power dissipation MAXIMUM RATINGS- TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -60 -50 -5 150 200 -55-150 Units V V V m A m W ℃
TRANSISTOR (NPN) TO- 92
1.EMITTER
2.COLLECTOR
3.BASE
1 2 3
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO h FE(1) VCE(sat) VBE(sat) f T Cob NF unless
Test otherwise
MIN 60 50 5...
