JE05B1UD10-2L
Description
Features
The JE05B1UD10-2L is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The JE05B1UD10-2L plies with the IEC 61000-4-2 (ESD) with ±30 k V air and ±30 k V contact discharge. It is assembled into an ultra-small 0.6x0.3x0.3mm lead-free DFN package. The small size and high ESD surge protection make JE05B1UD10-2L an ideal choice to protect cell phone, digital , audio players and many other portable applications.
Circuit Diagram
40W peak pulse power(8/20us) Low leakage:n A level Operating voltage: 5V Low clamping voltage One power line protects plies with following standards:
- IEC 61000-4-2 (ESD) immunity test Air discharge: ±30k V Contact discharge: ±30k V
- IEC61000-4-5 (Lightning) 4A (8/20μs) Ro HS pliant Package: DFN0603-2
Circuit and Pin Schematic
Marking Diagram
Applications
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