• Part: MMBD2835
  • Description: Silicon Epitaxial Planar Switching Diode
  • Category: Diode
  • Manufacturer: JR
  • Size: 379.57 KB
Download MMBD2835 Datasheet PDF
JR
MMBD2835
Features - Small package - Low forward voltage - Fast reverse recovery time - Small total capacitance Applications - Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range Marking Code: A1 SOT-23 Plastic Package MMBD2835 MMBD2836 Symbol IF Ptot Tj Tstg Value 35 75 100 350 150 - 55 to + 150 Unit V m A m W OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 m A at IF = 50 m A at IF = 100 m A Reverse Current at VR = 30 V at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = IR = 10 m A, IR(REC) = 1 m A Symbol MMBD2835 MMBD2836 VF VF VF MMBD2835 MMBD2836 V(BR)R CT trr Min. - - 35 75 - - Max. 1 1...