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HU830 - 500V N-Channel MOSFET

Download the HU830 datasheet PDF. This datasheet also covers the HD8 variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HD8-30.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HU830
Manufacturer JINGJIAZHEN
File Size 1.77 MB
Description 500V N-Channel MOSFET
Datasheet download datasheet HU830 Datasheet

Full PDF Text Transcription

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HD830_HU830 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.5 A 2.5 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ----- -- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.
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