SC1512 - SILICON CARBIDE SCHOTTKY DIODE

Datasheet Summary

Description

SIC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operati

Features

Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery.

JINAN JINGHENG

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Datasheet Details

Part number	SC1512
Manufacturer	JINAN JINGHENG
File Size	59.31 KB
Description	SILICON CARBIDE SCHOTTKY DIODE
Datasheet	SC1512 Datasheet
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R SEMICONDUCTOR SC1512 SILICON CARBIDE SCHOTTKY DIODE Reverse Voltage - 1200 Volts Forward Current - 15.0Amperes DESCRIPTION SIC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over-voltage conditions.

Published: Mar 13, 2019 |