• Part: JCS86N25WT
  • Manufacturer: JILIN SINO
  • Size: 543.17 KB
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JCS86N25WT Key Features

  • Low gate charge -Low Crss (typical 78pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS produc
  • pulse （note 1） 最高栅源电压
  • Derate above
  • 55～+150
  • 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
  • 100 μA
  • 100 nA
  • 100 nA
  • 37 50 mΩ
  • 76.6 VDD=125V,ID=69A,RG=25Ω，VGS

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JCS86N25WT Description

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS86N25T 主要参数 MAIN CHARACTERISTICS ID 86 A VDSS 250 V Rdson（Vgs=10V） -MAX 50mΩ Qg-Typ 123 nC 封装 Package 用途 高频开关电源. 电子镇流器 UPS 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS power supplies 产品特性 低栅极电荷 低 Crss（典型值 78pF） 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.