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JMGP10V10A - N-channel Enhancement Mode Power MOSFET

General Description

JMG N-channel Enhancement Mode Power MOSFET

Key Features

  • 100V,7A RDS(ON)< 140mΩ @ VGS =10V RDS(ON)< 300mΩ @ VGS =4.5V.
  • Advanced Split Gate Trench Technology.
  • Excellent RDS(ON) and Low Gate Charge.
  • Lead free product is acquired.

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Datasheet Details

Part number JMGP10V10A
Manufacturer JIEJIE
File Size 262.77 KB
Description N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet JMGP10V10A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JMGP10V10A Description JMG N-channel Enhancement Mode Power MOSFET Features  100V,7A RDS(ON)< 140mΩ @ VGS =10V RDS(ON)< 300mΩ @ VGS =4.