Datasheet4U Logo Datasheet4U.com

2SA821S - PNP Transistor

Key Features

  • z High Breakdown Voltage 2.

📥 Download Datasheet

Datasheet Details

Part number 2SA821S
Manufacturer JIANGSU CHANGJIANG
File Size 127.51 KB
Description PNP Transistor
Datasheet download datasheet 2SA821S Datasheet

Full PDF Text Transcription for 2SA821S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA821S. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA821S TRANSISTOR (PNP) 1. EMITTER FEATURES z High Breakdown Voltage 2...

View more extracted text
SA821S TRANSISTOR (PNP) 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -210 -210 -5 -0.