Full PDF Text Transcription for 2SA821S (Reference)
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA821S TRANSISTOR (PNP) 1. EMITTER FEATURES z High Breakdown Voltage 2...
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SA821S TRANSISTOR (PNP) 1. EMITTER FEATURES z High Breakdown Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -210 -210 -5 -0.