JCWT8CN2ES6 - N-Channel Enhancement Mode Field Effect Transistor
General Description
Trench Power LV MOSFET technology
High Power and current handing capability
DFN2
2-6L
Ordering Information (Example)
PREFERED P/N
PACK
Marking
Applications
PWM application
Load switch
MINIMUM PACKAGE(pcs)
INNER BOX QUANTITY(pcs)
OUTER CARTON QUANTITY(pcs)
D
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JCWT8CN2ES6
N-Channel Enhancement Mode Field Effect Transistor
Marking and pin assignment
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=1.