1N5518 - 0.4W Low Voltage Avalanche Diodes

Product Overview

JGD

Part number	1N5518
Manufacturer	JGD
File Size	328.92 KB
Description	0.4W Low Voltage Avalanche Diodes
Datasheet	1N5518 Datasheet
Additional preview pages of the 1N5518 datasheet.

Low Zener noise specified.
Low Zener impedance.
Low leakage current.
Hermetically sealed glass package 1N5518 THRU 1N5546 0.4W Low Voltage Avalanche Diodes ABA C D Cathode Mark DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.154 --- 3.90 C --- 0.020 --- 0.50 D --- 0.075 --- 1.90 Mechanical Data.
Case: Hermetically sealed glass case, DO-35.
Lead Material: Tinned copper clad steel.
Marking: Body painted, alphanumeric.

📁 Similar Datasheet

1N5518 - LOW REVERSE LEAKAGE CHARACTERISTICS (Compensated Deuices Incorporated)
1N5518 - LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE (Knox Semiconductor Inc)
1N5518 - Low Noise Zener Diode (MA-COM)
1N5518A - (1N5518A - 1N5546A) ZENER DIODES (New Jersey Semi-Conductor)
1N5518A - LOW VOLTAGE AVALANCHE ZENER DIODES (Motorola)
1N5518B - LOW REVERSE LEAKAGE CHARACTERISTICS (Compensated Deuices Incorporated)
1N5518B - 500mW Zener Diodes (Microsemi)
1N5518B - SILICON ZENER DIODES (Central Semiconductor)

Other Datasheets by JGD

Published: Aug 13, 2018 |