MBRD10200CT
FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
TO-25522-2L
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM VR(RMS)
IFSM
Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Average rectified output current Non-repetitive peak forward surge current 8.3ms half sine wave
PD RΘJA
Tj Tstg
Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Value
140 10
1.25 80 125 -55~+150
Unit
W ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=100μA
Reverse current
IR VR=200V
Forward voltage
VF(1)...
