MBR20200
FEATURES
- Schottky Barrier Chip
1. CATHODE 2. ANODE
- Guard Ring Die Construction for Transient Protection
- Low Power Loss,High Efficiency
- High Surge Capability
- High Current Capability and Low Forward Voltage Drop
- For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
MBR20125
Value MBR20150
VRRM VRWM
VR VR(RMS)
IO PD RΘJA Tj Tstg
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
125 87.5
105 20 2 50 125
-55~+150
200 140
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min
Reverse voltage Reverse current
Forward voltage
V(BR) IR
VF(1) VF(2)
MBR20125
MBR20150 MBR20200 MBR20125 MBR20150...
