MBR20125CT
FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
TO-220-3L
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM VRWM
VR VR(RMS)
IFSM
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current@ Tc=125℃ Non-Repetitive peak forward surge current 8.3ms half sine wave
PD RΘJA
Tj Tstg
Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Value
87.5 20 120 2 50 125 -55~+150
Unit
V A A W ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
V(BR)
IR=100μA
125...
