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3DD13001B - TO-92 Plastic-Encapsulate Transistors

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Datasheet Details

Part number 3DD13001B
Manufacturer JCST
File Size 192.79 KB
Description TO-92 Plastic-Encapsulate Transistors
Datasheet download datasheet 3DD13001B Datasheet

Full PDF Text Transcription for 3DD13001B (Reference)

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE · power switching applications TO-92 1. BASE M...

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RANSISTOR (NPN) FEATURE · power switching applications TO-92 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2. COLLECTOR 3.