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CJU75N06 - N-Channel Power MOSFET

Description

The CJU75N06 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

1.

VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Good stability and uni

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Datasheet Details

Part number CJU75N06
Manufacturer JCET
File Size 791.51 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU75N06 Datasheet

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU75N06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 60V 11.5mΩ@10V   75A   GENERAL DESCRIPTION The CJU75N06 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. TO-252-2L 1. GATE 2. DRAIN 3. SOURCE FEATURE  VDS =60V,ID =75A  RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.
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