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CJU55P30 - P-Channel Power MOSFET

Description

provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation.

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Datasheet Details

Part number CJU55P30
Manufacturer JCET
File Size 597.63 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CJU55P30 Datasheet

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU55P30 P-Channel Power MOSFET DESCRIPTION The CJU55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-252-2L FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Uninterruptible Power Supply(UPS) MARKING JCET LOGO CJU55P30= Part No. XXX=Date Code 1. GATE 2. DRAIN 3.
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