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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU20N06 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
60V
45mΩ@10V
20A
GENERAL DESCRIPTION The CJU20N06 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability
TO-252-2L
1. GATE 2. DRAIN 3.
CJU20N06 Datasheet
