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CJU05N60 - N-Channel Power MOSFET

Description

high energy in the avalanche mode and switch efficiently.

high energy device also offers a drain-to-source diode with fast recovery time.

1.

Features

  • z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified.

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Datasheet Details

Part number CJU05N60
Manufacturer JCET
File Size 816.66 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU05N60 Datasheet

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU05N60 V(BR)DSS 600V N-CHANNEL POWER MOSFET RDS(on)MAX   2.5Ω@10V ID 4.5 A TO-252-2L(4R) DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications 1. GATE 2. DRAIN 3. SOURCE 1 such as power suplies, converters, power motor controls and bridge circuits.
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