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CJS8820 - Dual N-Channel MOSFET

Description

RDS(ON) and low gate charge.

It is ESD protected.

common-drain configuration.

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Datasheet Details

Part number CJS8820
Manufacturer JCET
File Size 875.24 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CJS8820 Datasheet

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD CJS8820 V(BR)DSS   20V TSSOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET RDS(on)MAX  21mΩ@10V 24mΩ @4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V ID   7A   TSSOP8 DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: Equivalent Circuit S8820= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device.
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