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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
CJM3005 N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
42 mΩ@10V
30V
44 mΩ@4.5V
5A
50 mΩ@2.5V
DFNWB2×2-6L-J
FEATURE z TrenchFET Power MOSFET z Low RDS(ON) z Typical ESD Protection
MARKING
APPLICATION z Ideal for Load Swith and Battery Protection Applications
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
*Repetitive rating：Pluse width limited by junction temperature.
Symbol VDS VGS ID IDM* RθJA TJ TSTG
Value 30 ±10 5 20 250 150 -55~+150
Unit V V A A ℃/W ℃ ℃
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CJM3005 Datasheet
