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CJL8810 - Dual N-Channel MOSFET

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Description

RDS(ON) and low gate charge.

It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.

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Datasheet Details

Part number CJL8810
Manufacturer JCET
File Size 374.81 KB
Description Dual N-Channel MOSFET
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 Dual N-Channel MOSFET SOT-23-6L DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature.
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