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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3443 P-Channel 20-V(D-S) MOSFET
FEATURE z Fast Switching Speed z Low Gate Charge z High Performance Trench Technology for extremely Low RDS(on)
SOT-23-6L
1. GATE 2. DRAIN 3. SOURCE
Description This P-Channel MOSFET is produced using advanced PowerTrench
process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation In a very small footprint for applications where the larger packages are impractical.
CJL3443 Datasheet
