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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-L Plastic-Encapsulate MOSFETS
CJ/3415 P-Channel 20V(D-S) MOSFET
V(BR)DSS
-20V
RDS(on)MAX
50mΩ@-4.5V 60mΩ@-2.5V 73mΩ@-1. 8V
ID
-4.0A
SOT-23-6L
FEATURE Excellent RDS(ON), low gate charge,low gate voltage High power and current handing capability
APPLICATION Load switch and in PWM applicatopns
MARKING:
Equivalent Circuit
PIN1
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (t≤10s) Pulsed Drain Current (note1) Maximum Power Dissipation (t≤10s) Thermal Resistance from Junction to Ambient Operating Junction Temperature Storage Temperature
Symbol
VDS VGS ID IDM PD RθJA TJ TSTG
ValueUnit
-20 V
±8
-4.0
A
-30
A
0.
CJL3415 Datasheet
