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CJ3400A - N-Channel MOSFET

Description

SOT-23 parts are shipped in tape.

polycarbonate resin.

and anti-static sprayed agent.

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Datasheet Details

Part number CJ3400A
Manufacturer JCET
File Size 0.98 MB
Description N-Channel MOSFET
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)MAX 32mΩ@10V 38mΩ@4.5V 45mΩ@2.5V ID 5.8A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION z High dense cell design for extremely low RDS(ON) z Load/Power Switching z Exceptional on-resistance and maximum DC current capability z Interfacing Switching MARKING Equivalent Circuit Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value 30 ±12 5.
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