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iTR61810 - power amplifier MMIC

Description

The iTR61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band.

The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power.

Features

  • www. DataSheet4U. com Absolute Ratings Parameter Positive Drain DC Voltage Negative DC Voltage Simultaneous (VD-VG) RF CW Input Power (50 Ω source) 27 Drain Current Storage Temperature Operating Base Plate Temp Thermal Resistance (Channel to Backside) Symbol VD VG VDG Pin dBm ID Tstg Tc Rjc Value 8.5 -2 +10.5 Unit V V V 1.2 -55 to +125 -40 to +85 12 A °C °C °C/W Electrical Characteristics (at 25°C) 50 Ω system, Vd=+8V, Quiescent Current (Idq=600 mA) Parameter Frequency Range Small Signal.

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Datasheet Details

Part number iTR61810
Manufacturer Iterra
File Size 390.38 KB
Description power amplifier MMIC
Datasheet download datasheet iTR61810 Datasheet
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iTR61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC Description The iTR61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. This single channel amplifier provides typically, 21 dB small signal gain and 31 dBm output power at 1 dB gain compression. ™ ™ ™ ™ ™ ™ 21 dB Typical Small Signal Gain 2.0:1 Typical Input VSWR, 2.
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