Click to expand full text
DIP-GAM
VLA585-01R
PRELIMINARY
＜Dual-In-Line Package Gate Amp Module＞
VLA585-01R
DRIVER FOR IGBT MODULES
FEATURES
-Low height, DIP structure -Isolated gate signal by pulse transformer -Corresponding to gate signal ON Duty 100% -Dual gate drive circuits -Built in isolated DC-DC converter for gate drive -Built in short circuit protection with soft gate shut down -Adjustable fall time on activity of short circuit protection -Output peak gate current is +/-20A(max) -Isolation voltage is 4000Vrms (for 1 minute) -CMOS compatible input interface (Input low active type) -Low voltage lock out for gate power supply(VCC)
TARGETED IGBT MODULES
VCES = 600V series up to 600A class VCES = 1200V series up to 1400A class VCES = 1700V series up to 1400A class
APPLICATIONS
To drive IGBT modules for inve
VLA585-01R Datasheet
