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INC5002AP1-TH51 - Silicon NPN Epitaxial Transistor

General Description

INC5002AP1 is a silicon NPN epitaxial transistor designed for relay drive or Power supply application.

Small package for easy mounting.

High voltage VCEO=60V High collector current IC=3A Low VCE(sat) VCE（sat）=0.6V max（@IC=3A/ IB=300mA） High collector dissipation PC=5

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DESCRIPTION INC5002AP1 is a silicon NPN epitaxial transistor designed for relay drive or Power supply application. FEATURE ●Small package for easy mounting. ●High voltage VCEO=60V ●High collector current IC=3A ●Low VCE(sat) VCE（sat）=0.6V max（@IC=3A/ IB=300mA） ●High collector dissipation PC=500mW APPLICATION DC･DC converter, Relay drive, Motor drive 1.0 2.5 3.9 INC5002AP1-TH51 For low frequency power amplify Silicon NPN Epitaxial OUTLINE DRAWING 4.4 1.6 AEC-Q101 Compliance UNIT：ｍｍ 1.5 ③②① 0.5 0.4 1.5 3.0 0.