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INA6006AP1 - SILICON PNP EPITAXIAL TYPE TRANSISTOR

General Description

INA6006AP1 is a silicon PNP transistor.

It is designed with high voltage.

Small package for easy mounting.

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DESCRIPTION INA6006AP1 is a silicon PNP transistor. It is designed with high voltage. FEATURE Small package for easy mounting. High voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Complementary : INC6006AP1 APPLICATION High voltage switching. 1.0 2.5 3.9 INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING 4.4 1.6 UNIT:mm 1.5 ③②① 0.5 0.4 1.5 3.0 0.