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ISL71441M - Radiation Tolerant 12V Half-Bridge GaN FET Driver

Datasheet Summary

Description

The ISL71441M is a Radiation Tolerant PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators.

Features

  • Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU).
  • Up to 20V bootstrap voltage half-bridge driver.
  • Programmable 4.5V to 5.5V gate drive voltage.
  • Single tri-level PWM input control.
  • Separate source and sink driver outputs.
  • High-side peak drive: 2A Sourcing, 4A Sinking.
  • Low-side peak drive: 4A Sourcing, 8A Sinking.
  • High and low side programmable dead time control.
  • Highly matched fast propagation delay: 29ns.
  • Full military temp.

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Datasheet Details

Part number ISL71441M
Manufacturer Intersil
File Size 2.36 MB
Description Radiation Tolerant 12V Half-Bridge GaN FET Driver
Datasheet download datasheet ISL71441M Datasheet
Additional preview pages of the ISL71441M datasheet.

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Full PDF Text Transcription

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ISL71441M Radiation Tolerant 12V Half-Bridge GaN FET Driver Datasheet Description The ISL71441M is a Radiation Tolerant PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver. The ISL71441M can interface directly to the ISL73847M dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low voltage high current FPGA and DSP digital core rails. The ISL71441M is offered in a 20Ld 5×5mm Quad Flat No-Lead (QFN) plastic package.
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