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IS-2100AEH - Radiation Hardened High Frequency Half Bridge Driver

Download the IS-2100AEH datasheet PDF. This datasheet also covers the IS-2100ARH variant, as both devices belong to the same radiation hardened high frequency half bridge driver family and are provided as variant models within a single manufacturer datasheet.

Features

  • Electrically screened to DLA SMD # 5962-99536.
  • QML qualified per MIL-PRF-38535 requirements.
  • Radiation environment.
  • TID Rad Hard Assurance (RHA) testing ◦ HDR (50-300rad(Si)/s): 300krad(Si) ◦ LDR (≤ 10mrad(Si)/s): 50krad(Si) (AEH Only).
  • DI RSG process provides latch-up immunity.
  • SEU rating:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS-2100ARH_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS-2100ARH Radiation Hardened High Frequency Half Bridge Driver Intersil Corporation
IS-2981RH Radiation Hardened 8-Channel Source Driver Intersil Corporation
IS-1009RH Radiation Hardened 2.5V Reference Intersil Corporation
IS-139ASRH Single Event Radiation Hardened Quad Voltage Comparator Intersil Corporation
IS-1715ARH Radiation Hardened Complementary Switch FET Driver Intersil Corporation

Other Datasheets by Intersil (Renesas)

Part Number Description
IS-1009EH Radiation Hardened 2.5V Reference
IS-139ASEH Single Event Radiation Hardened Quad Voltage Comparator
IS-1715AEH Radiation Hardened Complementary Switch FET Driver
IS-1825ASRH High-Speed Dual Output PWMs
IS-1825BSEH High-Speed Dual Output PWMs

Full PDF Text Transcription

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IS-2100ARH, IS-2100AEH Radiation Hardened High Frequency Half Bridge Drivers Datasheet The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and highside gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).
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