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HS-4424DRH - Noninverting Power MOSFET Radiation Hardened Driver

Datasheet Summary

Description

PIN NUMBER 1, 3, 6, 8, 9, 16 2 4 5 7 10, 11 12, 13 14, 15 PIN NAME NC IN A GND A GND B IN B OUT B VCC OUT A VCC EQUIVALENT ESD CIRCUIT NA Circuit 2 NA NA Circuit 2 NA Circuit 1 NA DESCRIPTION No Internal Connection Driver A Input Ground Reference A Ground Reference B Driver B Input Driver B Ou

Features

  • Electrically screened to DLA SMD# 5962-99560.
  • QML qualified per MIL-PRF-38535 requirements.
  • Latch-up immune.
  • Radiation acceptance testing - HS-4424DRH - High dose rate (50-300rad(Si)/s).
  • . 300krad(Si).
  • Radiation acceptance testing - HS-4424DEH - High dose rate (50-300rad(Si)/s).
  • . 300krad(Si) - Low dose rate (0.01rad(Si)/s).
  • . . . 50krad(Si).
  • Limit established by characterization.
  • IPE.

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Datasheet Details

Part number HS-4424DRH
Manufacturer Intersil
File Size 678.85 KB
Description Noninverting Power MOSFET Radiation Hardened Driver
Datasheet download datasheet HS-4424DRH Datasheet
Additional preview pages of the HS-4424DRH datasheet.

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Full PDF Text Transcription

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DATASHEET HS-4424DRH, HS-4424DEH Dual, Noninverting Power MOSFET Radiation Hardened Drivers FN8747 Rev 3.00 Jan 12, 2021 The radiation hardened HS-4424 family are noninverting, dual, monolithic high-speed MOSFET drivers designed to convert low voltage control input signals into higher voltage, high current outputs. The HS-4424DRH, HS-4424DEH are fully tested across the 8V to 18V operating range. The inputs of these devices can be directly driven by the HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance.
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