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FSF9150D - P-Channel Power MOSFETs

Download the FSF9150D datasheet PDF. This datasheet also covers the FSF9150R variant, as both devices belong to the same p-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif

Key Features

  • 22A, -100V, rDS(ON) = 0.140Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 7.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Sp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FSF9150R_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FSF9150R P-Channel Power MOSFETs Intersil Corporation

Other Datasheets by Intersil (now Renesas)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
June 1998 FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 22A, -100V, rDS(ON) = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 7.