FRL234H - N-Channel Power MOSFET

Product Overview

Intersil

Datasheet Details

Part number	FRL234H
Manufacturer	Intersil
File Size	47.95 KB
Description	N-Channel Power MOSFET
Datasheet	FRL234H Datasheet
Additional preview pages of the FRL234H datasheet.

Product details

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

4A, 250V, RDS(on) = 0.700Ω.
Second Generation Rad Hard MOSFET Results From New Design Concepts.
Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 4.0nA Per-RAD(Si)/sec Typically Pre-RAD Speciﬁcations for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
Gamma Dot.

📁 Similar Datasheet

FRL15DDB5 - 1550nm 2.5Gbit/s Directly Modulated DFB Laser module (Furukawa)
FRL15DDBA - 1550nm 2.5Gbit/s Directly Modulated DFB Laser module (Furukawa)
FRL15DDBx-A31-xxxxx-E - 1550nm 2.5Gbit/s Directly Modulated DFB Laser module (Furukawa)

Other Datasheets by Intersil

FRL234D - N-Channel Power MOSFET
FRL234R - N-Channel Power MOSFET
FRL230D - N-Channel Power MOSFET
FRL230H - N-Channel Power MOSFET
FRL230R - N-Channel Power MOSFET
FRL130D - N-Channel Power MOSFET

Published: Apr 23, 2005 |