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RURU150100 - 150A/ 700V - 1000V Ultrafast Diodes

Description

RURU15070, RURU15080 and RURU15090 and RURU150100 are ultrafast diodes with soft recovery characteristics (tRR < 125ns).

They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

Features

  • Ultrafast with Soft Recovery.
  • .

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Other Datasheets by Intersil (Renesas)

Part Number Description
RURU150120 150A/ 1200V Ultrafast Diode
RURU15060 150A/ 600V Ultrafast Diode
RURU15070 150A/ 700V - 1000V Ultrafast Diodes
RURU15080 150A/ 700V - 1000V Ultrafast Diodes
RURU15090 150A/ 700V - 1000V Ultrafast Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RURU15070, RURU15080, RURU15090, RURU150100 April 1995 150A, 700V - 1000V Ultrafast Diodes Package JEDEC STYLE SINGLE LEAD TO-218 ANODE CATHODE (FLANGE) Features • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . .1000V • Avalanche Energy Rated • Planar Construction o Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Symbol K Description RURU15070, RURU15080 and RURU15090 and RURU150100 are ultrafast diodes with soft recovery characteristics (tRR < 125ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
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